JPH0343779B2 - - Google Patents

Info

Publication number
JPH0343779B2
JPH0343779B2 JP58081272A JP8127283A JPH0343779B2 JP H0343779 B2 JPH0343779 B2 JP H0343779B2 JP 58081272 A JP58081272 A JP 58081272A JP 8127283 A JP8127283 A JP 8127283A JP H0343779 B2 JPH0343779 B2 JP H0343779B2
Authority
JP
Japan
Prior art keywords
base region
region
impurity concentration
cvd film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58081272A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59205758A (ja
Inventor
Yasuhide Kamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP58081272A priority Critical patent/JPS59205758A/ja
Publication of JPS59205758A publication Critical patent/JPS59205758A/ja
Publication of JPH0343779B2 publication Critical patent/JPH0343779B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP58081272A 1983-05-09 1983-05-09 トランジスタの製造方法 Granted JPS59205758A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58081272A JPS59205758A (ja) 1983-05-09 1983-05-09 トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58081272A JPS59205758A (ja) 1983-05-09 1983-05-09 トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59205758A JPS59205758A (ja) 1984-11-21
JPH0343779B2 true JPH0343779B2 (en]) 1991-07-03

Family

ID=13741727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58081272A Granted JPS59205758A (ja) 1983-05-09 1983-05-09 トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59205758A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010046284A1 (en) * 2008-10-23 2010-04-29 Applied Materials, Inc. Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51102556A (en]) * 1975-03-07 1976-09-10 Hitachi Ltd
JPS5396666A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Manufacture of semiconductor device with pn junction

Also Published As

Publication number Publication date
JPS59205758A (ja) 1984-11-21

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